PART |
Description |
Maker |
GS816018 |
16MbM x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步静态RAM(位脉冲地址计数)
|
GSI Technology
|
19074-0004 19080-0003 19075-0014 19079-0011 19075- |
STAR RING KRIMPTITE (SRA-129-08) 1 mm2, BRASS, RING TERMINAL MULTI-STUD RING INSULKRIMP (B-2006-MSX) 2 mm2, COPPER ALLOY, RING TERMINAL STAR RING INSUL ON TAPE (SRB-229-06XT) 2 mm2, BRASS, RING TERMINAL MULTI-STUD RING (C-1006-MS) 6 mm2, COPPER ALLOY, RING TERMINAL STAR RING INSUL ON TAPE (SRA-229-06XT) 1 mm2, BRASS, RING TERMINAL STAR RING KRIMPTITE (SRA-129-06) 1 mm2, BRASS, RING TERMINAL 190770005 1 mm2, BRASS, RING TERMINAL STAR RING (STEEL) INSUL TAPED (SRA-S-229 1 mm2, STEEL, RING TERMINAL MULTI-STUD KRIMPTITE TAPED (C-1006-MST) STAR RING (STEEL) ON TAPE (SRB-S-129-10T 190740025
|
Molex, Inc. Littelfuse, Inc. MOLEX INC
|
GS815018 GS815036 |
16MbM x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器)) 16Mb的(100万x 18位)同步突发静态存储器,600位(100万18位)同步静态随机存储器(带2位脉冲地址计数器) 16Mb12K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器)) 16Mb的(12k × 36Bit)同步突发静态存储器,600位(12k × 36位)同步静态随机存储器(带2位脉冲地址计数器)
|
GSI Technology, Inc.
|
GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 64K x 32 / 2M Synchronous Burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
|
BCM3037 |
QAMlink® Upstream Burst Modulator BCM3037 QAMLINK-R UNIVERSAL BURST MODULATOR
|
Broadcom Corporation. BOARDCOM
|
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|